2SK10A50D PDF Datasheet

Description

:

Silicon N Channel MOSFET

Features :

• Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.)

• High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.)

• Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)

• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 10 A

4. Drain Power Dissipation : Pd = 45 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

1. Switching Regulator