Description:P-Channel Silicon MOSFET Features : • Low ON-resistanse. • Ultrahigh-speed switching. • 4V drive. Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = - 60 V 2. Gate to source voltage : VGSS = ± 20 V 3. Drain current : ID = - 1.8 A 4. Allowable Power Dissipation : Pd = 1.5 W 5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Ultrahigh-Speed Switching |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |