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2SJ506STR-E
Pch Single Power Mosfet -30V -10A 85Mohm DPAK(S)/To-252
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Description

:

 

1.  Low on-resistance
    RDS(on)= 0.065 Ωtyp. (at V
    GS = –10V, ID= –5A)

2.  Low drive current

3.  High speed switching

4.  4V gate drive devices.
 

Pinout

Absolute Maximum Ratings (Ta = 25°C)
 
1. Drain to source voltage : VDSS = - 30 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = - 10 A
4. Channel dissipation : Pch = 20 W
5. Channel temperature : Tch =  150 °C
6. Storage temperature : Tstg = -55 to +150 °C


Applications : 

High Speed Power Switching


Others datasheet of same file : 2SJ506(L),2SJ506(S),2SJ506L,2SJ506S


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