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2SJ189-TL-VB

P, -30V, -26A, Rds(on), 33M¦¸@10V, 46M¦¸@4.5V, 20VGS(¡ÀV), -1.3VTH(V) , TO252, , Dc-dc

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Description

:

P-Channel Silicon MOSFET

Features :

1. Low ON resistance.

2. Ultrahigh-speed switching.

3. Low-voltage drive.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = - 30 V

2. Gate to source voltage : VGSS = ± 15 V

3. Drain current : ID = - 4A

4. Allowable Power Dissipation : Pd = 30 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Application :

Very high-speed switching

Please enter the part number.

2SV-09  |  2SK950

2SK94  |  2SK82

2SK59  |  2SK43

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