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Description

The 2SJ184, P-channel vertical type MOS FET, is a switching device which can be dricen by 2.5V power supply. As the MOSFET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VTR camera and headphone stereos which need power saving.

Features : 

1. Directly driven by ICs having a 3V power supply

2. Possible to reduce the number of parts by omitting the bias resistor.

3. Complementary to 2SK1398 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = - 50 V

2. Gate to source voltage : VGSS = ± 7 V

3. Drain current : ID =  100 mA

4. Total Power Dissipation : Pd = 250 mw 

5. Operating temperature : Topt =  -55 to 80 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications : 

High-Speed Switching