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Description

The 2SJ180, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5V power source. 

As the MOS FET has low on-state resistance and excellent switching characteristtics, it is suitable for driving actuators such as motors, relays, and solenoids.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = - 30 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 1 A

4. Total Power Dissipation : Pd = 1 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications : 

HIGH-SPEED SWITCHING