Description:Silicon N-Channel IGBT Features : • High speed power switching Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage : Vces = 600 V
2. Gate to emitter voltage : Vges = ± 20 V
3. Collector current : Ic = 36 A
4. Channel dissipation : Pch = 100 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
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Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |