2SD772 PDF Datasheet

Description

:

SILICON EPITAXIAL PLANAR NPN TRANSISTOR

Features :

1. With TO-220C package

2. High breakdown voltage

3. High speed switching

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 150 V

2. Collector to Emitter Voltage : Vceo = 80 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 5 A

5. Total Dissipation : Pc = 40 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -50 ~ +150°C

Applications :

1. For power amplifier applications