Description:Silicon NPN Epitaxial Transistor Features : 1. Low frequency high voltage amplifier
Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 140 V 2. Collector to Emitter Voltage : Vceo = 140 V 3. Emitter to Base Voltage : Vebo = 5 V 4. Collector Current : Ic = 50 mA 5. Total Dissipation : Pc = 750 mW 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C
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Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |