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Toshiba
2SD2499
Power Bipolar Transistor, 6A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Description

:

Silicon NPN Transistor

 

Features : 

1. High Voltage  : VCBO= 1500 V

2. Low Saturation Voltage  : VCE (sat) = 5 V (Max.)

3. High Speed  : tf= 0.3 µs (Typ.)

4. Bult-in Damper Type

5. Collector Metal (Fin) is Fully Covered with Mold Resin.


Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1500 V

2. Collector to Emitter Voltage : Vceo = 600 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 6 A

5. Total Dissipation : Pc = 50 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C


Applications


1. Color TV horizontal deflection output 

2. HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV



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