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Toshiba
2SD2353
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Description

:

NPN TRIPLE DIFFUSED TYPE TRANSISTOR

 

Features  :

1. High DC Current Gain : hFE = 800 ~ 3200

2. Low Collector Saturation Voltage : Vce(sat) = 0.4V (Typ.)

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 60 V

2. Collector to Emitter Voltage : Vceo = 60 V

3. Emitter to Base Voltage : Vebo = 7 V

4. Collector Current : Ic = 3 A

5. Total Dissipation : Pc = 2 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C


Applications : 

POWER AMPLIFIER



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