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2SD2337C-E
Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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Description

:

Silicon NPN Triple Diffused Transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 200 V

2. Collector to Emitter Voltage : Vceo = 150 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 2 A

5. Total Dissipation : Pc = 1.5 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C



Applications : 

Low frequency high voltage power amplifier TV vertical deflection output complementary pair with
2SB1530



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