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Description

NPN Epitaxial Planar Silicon Transistor

Features :

1. Darlington connection ( Contains bias resistance, damper diode)

2. High DC current gain

3. Less dependence of DC current gain on temperature

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 100 V

2. Collector to Emitter Voltage : Vceo = 80 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 2 A

5. Total Dissipation : Pc = 1 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

General Drvier