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2SD1802T-TL-E
Bipolar Transistor, 50V, 3A, Low VCE(sat) NPN Single TP/TP-FA hFE = 200-400
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Description

:

1. Collector-Emitter Breakdown Voltage : V(BR)CEO = 70V(Min.)
2. Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max.)@ IC= 5A
3. Good Linearity of hFE

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 80 V

2. Collector to Emitter Voltage : Vceo = 70 V 

3. Emitter to Base Voltage : Vebo = 7 V

4. Collector Current : Ic = 6 A

5. Total Dissipation : Pc = 60 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -65 ~ +150°C

 

Applications : 

1. Audio frequency power amplifier and low speed switching
2. Suitable for output stages of 30 ~35 watts audio amplifier and DC-DC converter.



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