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Inchange Semiconductor
2SD1714
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Description

: Silicon NPN Power Transistor

1. Collector-Emitter Breakdown Voltage : V(BR)CEO = 140V(Min.)

2. Good Linearity of hFE

3. Wide Area of Safe Operation

4. Complement to Type 2SB1159

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 140 V

2. Collector to Emitter Voltage : Vceo = 140 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 7 A

5. Total Dissipation : Pc = 3 W

6. Junction Temperature : Tj = 150°C

 

7. Storage Temperatue : Tsg = -55 ~ +150°C



Applications : 

1 .Designed for high power amplifier applications


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Related Part Number


2SV-09  |  2SK950  

2SK94  |  2SK82  

2SK59  |  2SK43  


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