Description: Silicon NPN Power Transistor1. Collector-Emitter Breakdown Voltage : V(BR)CEO = 140V(Min.) 2. Good Linearity of hFE 3. Wide Area of Safe Operation 4. Complement to Type 2SB1159 Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 140 V 2. Collector to Emitter Voltage : Vceo = 140 V 3. Emitter to Base Voltage : Vebo = 5 V 4. Collector Current : Ic = 7 A 5. Total Dissipation : Pc = 3 W 6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C Applications : 1 .Designed for high power amplifier applications |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |