Description:Silicon Diffused Power NPN Transistor.
Features : High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers
Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 1500 V 2. Collector to Emitter Voltage : Vceo = 600 V 3. Collector Current : Ic = 3.5 A 4. Total Dissipation : Pc = 50 W 5. Junction Temperature : Tj = 150°C 6. Storage Temperatue : Tsg = -55 ~ +150°C Applications : Horizontal deflection circuits of color TV receiver |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |