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Description

Silicon NPN Power Transistor

Features :

1. With TO-3P(H)IS package
2. Built-in damper diode
3. High voltage ,high speed
4. Low collector saturation voltage

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1500 V

2. Collector to Emitter Voltage : Vceo = 600 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 6 A

5. Total Dissipation : Pc = 50 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

APPLICATIONS

· For color TV horizontaloutput applications