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Description

NPN tripple diffused planar silicon transistor.

Features :

1. High Collector-Base Voltage(VCBO=1500V)

2. High Speed Switching

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1500 V

2. Collector to Emitter Voltage : Vceo = 800 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 7 A

5. Total Dissipation : Pc = 50 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -50 ~ +150°C

Applications : 

Color TV horizontal output applications (no damper diode)