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Toshiba
2SD1415
Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Description

:

Silicon NPN Power Transistor

Features :

1. With TO-220Fa package
2. High DC current gain
3. Low saturation voltage
4. Complement to type 2SB1020
5. DARLINGTON


Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 100 V

2. Collector to Emitter Voltage : Vceo = 100 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 7 A

5. Total Dissipation : Pc = 30 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

 



Applications : 

1. High power switching
2. Hammer drive,pulse motor drive



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