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Description

Silicon NPN epitaxial planar type Transistor

Features

1. Low collector-emiiter saturation voltage Vce(sat)
2. Low ON resistance Ron
3. High forward current transfer ratio hfe

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 25 V

2. Collector to Emitter Voltage : Vceo = 20 V

3. Emitter to Base Voltage : Vebo = 12 V

4. Collector Current : Ic = 0.5 A

5. Total Dissipation : Pc = 600 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications : 

1. For low-voltage output amplification

2. For muting

3. For DC-DC converter