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Toshiba
2SD1148
Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Description

:

NPN PLANAR SILICON TRANSISTOR

Features : 

1. High Current Capability

2. High Power Dissipation

3. Complementary to 2SB863


Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 200 V

2. Collector to Emitter Voltage : Vceo = 140 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 10 A

5. Total Dissipation : Pc = 100 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

 

Applications :

1. Audio Power Amplifier

2. DC to DC Converter



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Related Part Number


2SV-09  |  2SK950  

2SK94  |  2SK82  

2SK59  |  2SK43  


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