2SD1111 PDF Datasheet

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Description

:

NPN Epitaxial Planar Silicon Darlington Transistor

Featurers

1. High DC Current Gain (5000 or greater).

2. Large current capacity and wide ASO.

3. Low saturation voltage (V CE(sat)=0.8V typ).

Pinouts :

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 80 V

2. Collector to Emitter Voltage : Vceo = 50 V

3. Emitter to Base Voltage : Vebo = 10 V

4. Collector Current : Ic = 0.7 A

5. Total Dissipation : Pc = 600 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

1. Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.