2SD1062 PDF Datasheet

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Description

NPN silicon power transistor

2SD1062 transistor is designed for use in general purpose Power amplifier, application.

Features :

1. Complement to 2SB817

2. Low Collector-Emitter Saturation Voltage

3. DC Current Gain

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 60 V

2. Collector to Emitter Voltage : Vceo = 50 V

3. Emitter to Base Voltage : Vebo = 7 V

4. Collector Current : Ic = 12 A

5. Junction Temperature : Tj = 150°C

6. Storage Temperatue : Tsg = -55 ~ +150°C