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PDF 2SD1047 Download

STMicroelectronics
2SD1047
High power NPN epitaxial planar bipolar transistor
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Description

:

The descriptions in parentheses are for the 2SB817 only :
other descriptions than those in parentheses are common to the 2SB817 and 2SD1047.

 

Features

1. Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3).

2. Wide ASO because of on-chip ballast resistance.

3. Good depenedence of fT on current and excellent high frequency responce.

 

Test Circuits : 

 

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 160 V

2. Collector to Emitter Voltage : Vceo = 140 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 12 A

5. Total Dissipation : Pc = 100 w

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -40 ~ +150°C

Applications :

AF 60W output




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