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Description

NPN Triple Diffused Planar Silicon Transistor

Features : 

1. High breakdown voltage.

2. High reliability.

3. High-speed switching.

4. Wide ASO.

5. Adoption of MBIT process.

Test Circuit : 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 700 V

2. Collector to Emitter Voltage : Vceo = 400 V

3. Emitter to Base Voltage : Vebo = 8 V

4. Collector Current : Ic = 7 A

5. Total Dissipation : Pc = 1.75 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C