2SC5296 PDF Datasheet

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Description

:

Silicon NPN Power Transistor

Features :

1. With TO-3PML package

2. High breakdown voltage, high reliability.

3. High speed

4. Built in damper diode

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1500 V

2. Collector to Emitter Voltage : Vceo = 800 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 8 A

5. Total Dissipation : Pc = 3 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

1. Ultrahigh-definition CRT display

2. Horizontal deflection output