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Description

Silicon NPN Triple Diffused Planar Transistor


Features

•  High breakdown voltage VCBO= 1500 V
•  High speed switching tf ≤0.15 µsec(typ.)
•  Isolated package TO–3P FM

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1500 V

2. Collector to Emitter Voltage : Vceo = 800 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 15 A

5. Total Dissipation : Pc = 50 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Application : 

Character Display Horizontal Deflection Output