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Description

NPN EPITAXIAL SILICON TRANSISTOR

Features : 

1. Low current consumption and high gain

2. Supper Mini-Mold package

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 5 V

2. Collector to Emitter Voltage : Vceo = 3 V

3. Emitter to Base Voltage : Vebo = 2 V

4. Collector Current : Ic = 10 mA

5. Total Dissipation : Pc = 30 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -65 ~ +150°C

Applications :

LOW-NOISE MICROWAVE AMPLIFICATION