2SC4636 PDF Datasheet

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Description

:

NPN Triple Diffused Planar Silicon Transisotor

Features :

1. High breakdown voltage ( Vceo min = 1800V)

2. Small Cob ( typical Cob = 1.4 pF).

3. Full-isolation package.

4. High reliability (Adoption of HVP process).

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 2000 V

2. Collector to Emitter Voltage : Vceo = 1800 V

3. Emitter to Base Voltage : Vebo = 50 V

4. Collector Current : Ic = 10 mA

5. Total Dissipation : Pc = 2 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

1. High-Voltage Amplifier

2. High-Voltage Switching