2SC4520 PDF Datasheet

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Description

:

NPN Epitaxial Planar Silicon Transistor

Features

1. Adoption of FBET, MBIT processes

2. Large current capacity

3. Low collector-to-emitter saturation voltage

4. Fast switching speed

5. Small-sized package.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 60 V

2. Collector to Emitter Voltage : Vceo = 45 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 1.5 A

5. Total Dissipation : Pc = 1.3 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Application :

High-Speed Switching