Description:NPN Epitaxial Planar Silicon Transistor Features : 1. Fast switching speed 2. Low collector saturation voltage 3. High gain-bandwidth product 4. Small collector capacity
Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 40 V 2. Collector to Emitter Voltage : Vceo = 15 V 3. Emitter to Base Voltage : Vebo = 5 V 4. Collector Current : Ic = 200 mA 5. Total Dissipation : Pc = 300 mW 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C Applications : High-Speed Switching |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |