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2SC4367
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, High Frequency Band, Silicon, NPN, TO-92
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Description

:

Silicon NPN Epitaxial Transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 30 V

2. Collector to Emitter Voltage : Vceo = 20 V

3. Emitter to Base Voltage : Vebo = 3 V

4. Collector Current : Ic = 100mA

5. Total Dissipation : Pc = 600 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C


Applications : 

High Frequency amplifier



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