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Description

NPN Triple Diffused Planar Silicon Transistor


Features :

1. High breakdown voltage, high reliability

2. Fast switching speed ( tf : 0.1us typ)

3. Wide ASO

4. Adoption of MBIT process

5. Suitable for sets whose height is restricted

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 800 V

2. Collector to Emitter Voltage : Vceo = 500 V

3. Emitter to Base Voltage : Vebo = 7 V

4. Collector Current : Ic = 3 A

5. Total Dissipation : Pc = 40 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

 
Applications :

Switching Regulator