2SC4161 PDF Datasheet

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Description

:

NPN Triple Diffused Planar Silicon Transistor

Features :

1. High breakdown voltage, high reliability.

2. High-speed switching (tf=0.1µs typ).

3. Wide ASO.

4. Adoption of MBIT process.

5. Micaless package facilitating mounting.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 500 V

2. Collector to Emitter Voltage : Vceo = 400 V

3. Emitter to Base Voltage : Vebo = 7 V

4. Collector Current : Ic = 7 A

5. Total Dissipation : Pc = 2 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

Switching Regulator