2SC4105 PDF Datasheet

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Worldway Electronics	28,442		0.536	0.5259	Visit Site
Esaler Electronic	443	0.68	0.674	0.668	Visit Site
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Description

NPN triple diffused planar silicon transistor

Features :

1. High breakdown voltage and high reliability.

2. Fast switching speed.

3. Wide ASO.

4. Adoption of MBIT process.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 500 V

2. Collector to Emitter Voltage : Vceo = 400 V

3. Emitter to Base Voltage : Vebo = 7 V

4. Collector Current : Ic = 4 A

5. Total Dissipation : Pc = 1.75 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

Switching Regulator