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ROHM
2SC4102U3HZGT106R
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon

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Description

:

Type Designator: 2SC410

Material of transistor: Si

Polarity: NPN

Absolute maximum ratings ( Ta=25°C )

1. Maximum collector power dissipation : Pc = 100 W

2. Maximum collector-base voltage : Vcbo = 200 V

3. Maximum collector-emitter voltage : Vceo = 140 V

4. Maximum emitter-base voltage : Vebo = 4 V

5. Maximum collector current : Ic = 10 A

6. Maksimalna temperatura (Tj), °C: 150

7. Transition frequency (ft), MHz: 200

8. Collector capacitance (Cc), pF: 500

9. Forward current transfer ratio (hFE), min: 20



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