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Description

NPN Epitaxial Planar Silicon Transistor

Features : 

1. High gain-bandwidth product : fT=300MHz.

2. High breakdown voltage : VCEO=200Vmin.

3. Small reverse transfer capacitance and excellent high frequency characteristics :
Cre =1.5pF/NPN, 1.8pF/ PNP.

4. Complementary PNP and NPN types.

5. Adoption of FBET process.

6. Micaless type : TO-126 plastic package.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 200 V

2. Collector to Emitter Voltage : Vceo = 200 V

3. Emitter to Base Voltage : Vebo = 3 V

4. Collector Current : Ic = 100 mA

5. Total Dissipation : Pc = 1.3 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

1. High-Definition CRT Display Video Output 

2. Wide-band amplifier.