Description:Silicon NPN Power Transistor Features : 1. High speed 2. High breakdown voltage 3. High reliability Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 1500 V 2. Collector to Emitter Voltage : Vceo = 800 V 3. Emitter to Base Voltage : Vebo = 6 V 4. Collector Current : Ic = 8 A 5. Total Dissipation : Pc = 3 W 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C
1. Ultrahigh-definition CRT display horizontal deflection output |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |