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Panasonic
2SC3896
Power Bipolar Transistor, 8A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Description

:

Silicon NPN Power Transistor

Features :

1. High speed 

2. High breakdown voltage  

3. High reliability

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1500 V

2. Collector to Emitter Voltage : Vceo = 800 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 8 A

5. Total Dissipation : Pc = 3 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C


Applications : 

1. Ultrahigh-definition CRT display horizontal deflection output



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