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Description

NPN Epitaxial Planar Silicon Transistor

Features : 

1. Large current capacity (IC=2A).

2. Adoption of MBIT process.

3. High DC current gain (hFE=800 to 3200).

4. Low collector-to-emitter saturation voltage(V ce(sat)≤0.5V).

5. High VEBO(VEBO≥15V).

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 30 V

2. Collector to Emitter Voltage : Vceo = 25 V

3. Emitter to Base Voltage : Vebo = 15 V

4. Collector Current : Ic = 2 A

5. Total Dissipation : Pc = 1.2 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications : 

1. High hFE, Low-Frequency General-Purpose Amplifier 

2. Large current capacity (IC=2A)