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Description

NPN Epitaxial Planar Silicon Transistor

 
Features

1. High fT(fTtyp=500MHz).

2. High breakdown voltage (VCEO≥120V).

3. Small reverse transfer capacitance and excellent HF response
: Cre =2.6pF (NPN), 3.9pF (PNP).

4. Complementary PNP and NPN types.

5. Adoption of FBET process.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 120 V

2. Collector to Emitter Voltage : Vceo = 120 V

3. Emitter to Base Voltage : Vebo = 4 V

4. Collector Current : Ic = 

5. Total Dissipation : Pc =

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

1. Ultrahigh-Definition CRT Display Video Output 

2. Video output.

3. Color TV chroma output.

4. Wide-band amp.