Description:NPN Epitaxial Planar Silicon Transistor Features : 1. High power gain : PG=10dB typ (f=0.9GHz). PG=16dB typ (f=0.4GHz). 2. Small noise figure : NF=3.5dB typ (f=0.9GHz). 3. High cutoff frequency : fT=2.2GHz typ.
1. Collector to Base Voltage : Vcbo = 30 V 2. Collector to Emitter Voltage : Vceo = 20 V 3. Emitter to Base Voltage : Vebo = 3 V 4. Collector Current : Ic = 30 mA 5. Total Dissipation : Pc = 250 mW 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C
Applications : UHF, VHF Oscillator Mixer, HF Amplifier
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Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |