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Description

Silicon NPN Epitaxial Type Transistor

Features : 

1. Complementary to 2SA1451A

2. Low Collector Saturation Voltage : Vce(sat) = 0.4 (Max.)

3. High Speed Switching Time 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 60 V

2. Collector to Emitter Voltage : Vceo = 50 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 12 A

5. Total Dissipation : Pc = 30 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

High Current Switching