Description:NPN Epitaxial Planar Silicon Transistor Features 1. Adoption of FBET process. Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 100 V 2. Collector to Emitter Voltage : Vceo = 80 V 3. Emitter to Base Voltage : Vebo = 5 V 4. Collector Current : Ic = 500 mA 5. Total Dissipation : Pc = 600 mW 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C
Low-Frequency Driver |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |