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Description

NPN Epitaxial Planar Silicon Transistor 

Features : 

1. Built-in bias resistor (R1 = 10Kohm, R2 = 10Kohm)

2. Small-sized package(SPA)

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 50 V

2. Collector to Emitter Voltage : Vceo = - 50 V

3. Emitter to Base Voltage : Vebo = - 10 V

4. Collector Current : Ic = - 100 mA

5. Total Dissipation : Pc = 300 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications : 

1. Switching circuit, inverter, interface circuit, driver

2. Switching Applications (with Bias Resistance)