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Description

NPN EPITAXIAL TYPE TRANSISTOR

Features : 

1. Low Collector Saturation Voltage : Vcs(sat) = 0.4V (Max.)

2. High Speed Switching Time

3. Complementary to 2SA1329

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 80 V

2. Collector to Emitter Voltage : Vceo = 80 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 12 A

5. Total Dissipation : Pc = 40 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications : 

1. LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE

2. CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS

3. High Current Switching