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Description

 NPN planar silicon darlington transistor

Test Circuits : 

Features 

1. High DC current gain.

2. Large current capacity and wide ASO.

3. On-chip Zener diode of 60±10V between collector and base.

4. Uniformity in collector-to-base breakdown voltage due to the adoption of an accurate impurity diffusion process.

5. High inductive load handling capability.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 50 V

2. Collector to Emitter Voltage : Vceo = 50 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 2 A

5. Total Dissipation : Pc = 20 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications

1. Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers).