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Description

NPN Epitaxial Planar Silicon Transistor

Features

1. High VEBO.

2. Wide ASO and high durability against breakdown.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 60 V

2. Collector to Emitter Voltage : Vceo = 50 V

3. Emitter to Base Voltage : Vebo = 15 V

4. Collector Current : Ic = 150 mA

5. Total Dissipation : Pc = 200 mW

6. Junction Temperature : Tj = 125°C

7. Storage Temperatue : Tsg = -55 ~ +125°C

Applications : 

F for AF Applications / Wide ASO and high durability against breakdown.