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2SC3089
Power Bipolar Transistor, 7A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Description

:

Silicon NPN Power Transistor


Features : 

1. With TO-3PN package 

2. High breakdown voltage (VCBO 800V)

3. Fast switching speed

4. Wide ASOSafe Operating Area

 

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 800 V

2. Collector to Emitter Voltage : Vceo = 500 V

3. Emitter to Base Voltage : Vebo = 7 V

4. Collector Current : Ic = 7 A

5. Total Dissipation : Pc = 2.5 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

500V, 7A Switching Regulator 


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Related Part Number


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