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2SC2610TZ-E

Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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Description

:

Silicon NPN Triple Diffused Transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 300 V

2. Collector to Emitter Voltage : Vceo = 300 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 100 mA

5. Total Dissipation : Pc = 800 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

• High voltage amplifier
• TV Video output

Please enter the part number.

2SV-09  |  2SK950

2SK94  |  2SK82

2SK59  |  2SK43

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