2SC2482 PDF Datasheet

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Description

NPN EPITAXIAL SILICON TRANSISTOR

Features :

1. High Voltage :V(BR)CEO= 300V
2. Small Collector Output Capacitance: Cob=3.0pF(Typ.)

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 300 V

2. Collector to Emitter Voltage : Vceo = 300 V

3. Emitter to Base Voltage : Vebo = 7 V

4. Collector Current : Ic = 100 mA

5. Total Dissipation : Pc = 900 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

1. HIGH VOLTAGE SWITCHING AND AMPLIFIER

2. COLOR TV HORIZ. DRIVER

3.. COLOR TV CHROMA OUTPUT